Methods of Fabricating Integrated Structures, and Methods of Forming Vertically-Stacked Memory Cells

ABSTRACT

Some embodiments include a method of fabricating integrated structures. A metal-containing material is formed over a stack of alternating first and second levels. An opening is formed through the metal-containing material and the stack. Repeating vertically-stacked electrical components are formed along the stack at sidewalls of the opening. Some embodiments include a method of forming vertically-stacked memory cells. Metal-containing material is formed over a stack of alternating silicon dioxide levels and conductively-doped silicon levels. A first opening is formed through the metal-containing material and the stack. Cavities are formed to extend into the conductively-doped silicon levels along sidewalls of the first opening. Charge-blocking dielectric and charge-storage structures are formed within the cavities to leave a second opening. Sidewalls of the second opening are lined with gate dielectric and then channel material is formed within the second opening.

TECHNICAL FIELD

Methods of fabricating integrated structures, and methods of formingvertically-stacked memory cells.

BACKGROUND

Memory provides data storage for electronic systems. Flash memory is onetype of memory, and has numerous uses in modern computers and devices.For instance, modern personal computers may have BIOS stored on a flashmemory chip. As another example, it is becoming increasingly common forcomputers and other devices to utilize flash memory in solid statedrives to replace conventional hard drives. As yet another example,flash memory is popular in wireless electronic devices because itenables manufacturers to support new communication protocols as theybecome standardized, and to provide the ability to remotely upgrade thedevices for enhanced features.

NAND may be a basic architecture of flash memory. A NAND cell unitcomprises at least one selecting device coupled in series to a serialcombination of memory cells (with the serial combination commonly beingreferred to as a NAND string). Example NAND architecture is described inU.S. Pat. No. 7,898,850. NAND architecture may be configured to comprisevertically-stacked memory cells. Fabrication of the vertically-stackedmemory cells may comprise forming openings through a tall stack ofalternating electrically conductive levels and electrically insulativelevels, which becomes increasingly difficult with higher aspect ratioand smaller critical dimensions of the openings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1-11 are cross-sectional views of a semiconductor construction atprocess stages of an example embodiment method of forming integratedstructures.

FIG. 12 is a cross-sectional view of a semiconductor construction at aprocess stage of another example embodiment method of forming integratedstructures.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In some embodiments, metal-containing masks are utilized to patternopenings during fabrication of vertical NAND strings. Themetal-containing masks may be sacrificial, or may be incorporated intoselect gates associated with the NAND strings. Example embodiments aredescribed with reference to FIGS. 1-12.

Referring to FIG. 1, a semiconductor construction 10 is shown tocomprise a stack 15 of alternating first and second levels 18 and 20.The levels 18 may be electrically insulative, and the levels 20 may beelectrically conductive. The electrically conductive levels 20 maycomprise, for example, one or more of various metals (for example,tungsten, titanium, etc.), metal-containing compositions (for example,metal nitride, metal carbide, metal silicide, etc.), andconductively-doped semiconductor materials (for example,conductively-doped silicon, conductively-doped germanium, etc.). Forinstance, the electrically conductive levels 20 may comprise n-typedoped polycrystalline silicon (i.e., n-type doped polysilicon). Theelectrically insulative levels 18 may comprise any suitable compositionor combination of compositions; and may, for example, comprise silicondioxide.

The levels 18 and 20 may be of any suitable thicknesses; and may, forexample, have thicknesses within a range of from about 10 nm to about300 nm. In some applications, the levels 18 may be thinner than thelevels 20. For instance, levels 18 may be about 20 nm thick and levels20 may be about 30 nm thick.

The electrically conductive levels 20 may be utilized to pattern controlgates of flash devices. In such applications, a vertical string ofmemory cells (such as, for example, a vertical NAND string of memorycells) may be fabricated, with the number of memory cells in each stringbeing determined by the number of electrically conductive levels 20. Thestack may comprise any suitable number of electrically conductivelevels. For instance, the stack may have 8 electrically conductivelevels, 16 electrically conductive levels, 32 electrically conductivelevels, 64 electrically conductive levels, etc.

The stack is over a source-side select-gate material 16, which is overan etchstop material 14.

The source-side select-gate material 16 may comprise any suitableelectrically conductive composition or combination of compositions; andmay, for example, comprise p-type doped silicon and/or other suitableconductively-doped semiconductor material.

The etchstop material may comprise, for example, one or more oxides;such as, for example, one or more of aluminum oxide, hafnium oxide, etc.

The etchstop material 14 is over a source material 13. The sourcematerial may comprise any suitable electrically conductive material; andmay, for example, comprise metal (e.g., copper, titanium, tungsten,etc.), metal-containing composition (e.g., metal carbide, metal nitride,metal silicide, etc.) and/or conductively-doped semiconductor material(e.g., conductively-doped silicon, conductively-doped germanium, etc.).In some embodiments, the etchstop material may be omitted, and insteadetching may selectively stop at source material 13 (for instance, insome embodiments, material 13 may be tungsten silicide and appropriateetching conditions may be chosen to selectively stop at material 13during subsequent process stages which may enable processing to beconducted without using a separate etchstop).

The source material 13 is supported by a base 12. A break is providedbetween the material 13 and the base 12 to indicate that there may beadditional materials and/or integrated circuit structures between thebase and the material 13.

The base 12 may comprise semiconductor material; and may, for example,comprise, consist essentially of, or consist of monocrystalline silicon.The base 12 may be referred to as a semiconductor substrate. The term“semiconductor substrate” means any construction comprisingsemiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials), and semiconductive materiallayers (either alone or in assemblies comprising other materials). Theterm “substrate” refers to any supporting structure, including, but notlimited to, the semiconductor substrates described above. In someapplications, the base 12 may correspond to a semiconductor substratecontaining one or more materials associated with integrated circuitfabrication. Such materials may include, for example, one or more ofrefractory metal materials, barrier materials, diffusion materials,insulator materials, etc.

A metal-containing material 22 is over stack 15, a protective cappingmaterial 23 is over the metal-containing material 22, and acarbon-containing material 24 is over the capping material. In someembodiments, metal-containing material 22 may be a drain-sideselect-gate material.

The metal-containing material 22 may comprise any suitable compositionor combination of compositions; including, for example, one or more ofelemental metals (e.g., titanium, tungsten, copper, aluminum, ruthenium,etc.) and metal-containing compositions (e.g., metal nitrides, metalcarbides, metal silicides, polysilicon with one or more deposited metallayers, etc.). In some embodiments, the metal-containing material 22 issacrificial. In some embodiments, metal-containing material 22 isincorporated into a drain-side select gate, and accordingly may bereferred to as a drain-side select-gate material. In such embodiments,the metal-containing material 22 may comprise, for example, metalnitride; such as, for example, one or both of titanium nitride andtungsten nitride. The metal-containing material 22 may be formed to anysuitable thickness, and in some embodiments may be formed to a thicknessof from about 120 nm to about 150 nm. In some embodiments, themetal-containing material may be a combination of polysilicon and one ormore metal-containing layers, with the metal-containing layers beingdeposited to thicknesses within a range of from about 20 nm to about 40nm.

The protective capping material 23 may comprise, for example, siliconnitride and/or silicon dioxide.

The carbon-containing material 24 may comprise, for example, amorphouscarbon.

The construction of FIG. 1 may be formed with any suitable processing.For instance, the materials 13, 14, 16, 18, 20, 22, 23 and 24 may beformed in sequential order over base 12 using one or more of atomiclayer deposition (ALD), chemical vapor deposition (CVD), and physicalvapor deposition (PVD) with appropriate deposition parameters andmaterials, and utilizing one or more process chambers.

Referring to FIG. 2, an opening 30 is formed to extend through materials16, 18, 20, 22 and 23; and the carbon-containing material 24 (FIG. 1) isremoved. The opening 30 extends to the etchstop material 14, and mayeven extend partially into such etchstop material. However, the openingdoes not extend entirely through the etchstop material. The illustratedopening is an example, and a plurality of such openings may be formedand treated during fabrication of an integrated assembly (e.g., a NANDmemory array).

The opening 30 may be formed utilizing any suitable processing. Forinstance, a patterned mask (not shown) may be formed over material 24(FIG. 1) to define a location of opening 30, and then the opening may beextended through the materials 16, 18, 20, 22 and 23 with one or moreetches. The patterned mask and carbon-containing material 24 (FIG. 1)may be removed during and/or after extending opening 30 into one or moreof the materials 16, 18, 20, 22 and 23. The patterned mask utilized todefine the opening 30 may be any suitable mask, including, for example,photolithographically-patterned photoresist and/or a mask formedutilizing pitch-multiplication methodologies. Since the opening isformed through all of materials 16, 18, 20 and 22 with a single mask,the opening may be considered to be formed through all of such materialsin single etch step in some embodiments.

The opening 40 has sidewalls 31. The opening may be a closed shape whenviewed from above (for instance, a circle, ellipse, rectangle, square,etc.) so that the illustrated sidewalls 31 are part of a continuoussidewall that extends around such closed shape.

The opening 30 may be a high-aspect-ratio opening, and advantageouslyhas relatively straight sidewalls. In the shown embodiment, thesidewalls stay vertical along metal-containing material 22, and then“blowout” a little upon reaching stack 15. However, in some embodimentsthe sidewalls along the stack still remain substantially vertical, atleast in part due to a metal-containing material 22 functioning as ahardmask during the etching through stack 15.

A problem that may occur in prior art methods of forming an openingthrough a stack analogous to stack 15 is that the sidewalls along thestack become substantially sloped due to a high-critical-dimensionopening becoming much narrower at the bottom relative to the top duringthe etching utilized to form the opening. Ultimately, vertically-stackedelectrical components may be formed along the sidewalls, and the slopedsidewalls may make it difficult to have uniform operating parametersacross all of the components. The relatively straight sidewalls achievedwhen utilizing a metal-containing material 22 as a hardmask canalleviate, and even prevent, such difficulties when fabricatinghigh-critical-dimension openings.

Referring to FIG. 3, cavities 40 are formed to extend into theconductive levels 20 along the sidewalls 31 of opening 30. Such cavitiesmay be formed with an isotropic etch selective for the material ofconductive levels 20 relative to the material of insulative levels 18.In some embodiments, conductive levels 20 comprise conductively-dopedsilicon, insulative levels 18 comprise silicon dioxide, and the cavities40 are formed utilizing tetramethylammonium hydroxide (TMAH). In theshown embodiment, the metal-containing material 22 is not significantlyetched during formation of cavities 40. For instance, ifmetal-containing material 22 comprises one or both of titanium nitrideand tungsten nitride, the material may be substantially resistant to theTMAH etching utilized to form cavities 40.

The conductive material 16 below stack 15 is shown to be substantiallyresistant to the etch utilized to form cavities 40. In some embodiments,levels 20 comprise n-type doped silicon, and conductive material 16comprises p-type doped silicon; and the conditions utilized to formcavities 40 are substantially selective for n-type doped siliconrelative to p-type doped silicon.

Referring to FIG. 4, charge-blocking dielectric 42 is formed alongsidewalls 31 of opening 30 and within cavities 40. The charge-blockingdielectric may comprise any suitable composition or combination ofcompositions; and in some embodiments may comprise one or more ofsilicon nitride, silicon dioxide, hafnium oxide, zirconium oxide, etc.For instance, in some embodiments the charge-blocking dielectric 42 maycomprise silicon dioxide/silicon nitride/silicon dioxide. In the shownembodiment, the charge-blocking dielectric 42 forms alongmetal-containing material 22, as well as within cavities 40. In someembodiments, the charge-blocking dielectric may be formed by initiallydepositing silicon dioxide utilizing tetraethylorthosilicate and ozone(e.g., may be formed with a high-aspect ratio process [HARP]), followedby deposition of silicon nitride, which in turn is followed byadditional deposition of silicon dioxide. The initial silicon dioxidemay be treated with in situ steam generation (ISSG) in someapplications.

Referring to FIG. 5, charge-storage material 44 is formed over thecharge-blocking dielectric 42 and within cavities 40. The charge-storagematerial may comprise any suitable composition or combination ofcompositions; and in some embodiments may comprise floating gatematerial (for instance, doped or undoped silicon) or charge-trappingmaterial (for instance, silicon nitride, metal dots, etc.).

Referring to FIG. 6, the charge-blocking dielectric 42 andcharge-storage material 44 are removed from surfaces of materials 16, 22and 23, while leaving the charge-blocking dielectric 42 and thecharge-storage material 44 within cavities 40. Such removal may beaccomplished with any suitable processing. For instance, in someembodiments the charge-storage material 44 may be removed utilizing TMAHor hydrofluoric acid vapor. Subsequently, charge-blocking dielectric 42may be removed with any suitable etch or combination of etches. Suchetches may include hot phosphoric acid etching to remove oxide in someembodiments.

The charge-storage material 44 remaining at the processing stage of FIG.6 is configured as charge-storage structures 46 (only some of which arelabeled) within the cavities 40.

The opening remaining at the processing stage of FIG. 6 may be referredto as a second opening 50. Such second opening has sidewalls 51 thatextend along materials 16, 22 and 23, and which also extend alongsurfaces of the charge-storage structures 46.

Referring to FIG. 7, gate-dielectric material 60 and protective material62 are formed along sidewalls 51 of opening 50 to line such sidewalls.

The gate-dielectric material may comprise any suitable composition orcombination of compositions; and in some embodiments may comprise one ormore of silicon dioxide, hafnium oxide, zirconium oxide, aluminum oxide,etc. In some embodiments, it may be desired to deposit thegate-dielectric material rather than oxidatively grow thegate-dielectric material so that the gate-dielectric material is acommon composition across all of the materials 16, 22 and 23. In someembodiments, the gate dielectric may be formed by first depositing apolysilicon liner, and then converting the polysilicon to silicondioxide utilizing steam (for instance, utilizing ISSG).

The protective material 62 is a sacrificial material, and may compriseany suitable composition or combination of compositions. For instance,in some embodiments the protective material 62 may comprise one or moreof silicon nitride, polysilicon, etc.

Referring to FIG. 8, an isotropic etch is utilized to punch through theetchstop material 14 at the bottom of the lined second opening 50, whichextends the opening to the source material 13. In the shown embodiment,the etch has penetrated partially into the source material. In otherembodiments, the etch may extend only to an upper surface of the sourcematerial.

The protective material 62 protects the gate dielectric 60 from beingdegraded by the etch conditions utilized to punch through the etchstopmaterial. In the shown embodiment, the etching conditions utilized topunch through the etchstop material have partially removed theprotective capping material 23. In subsequent processing, the remainderof the protective capping material 23 may be removed with a suitableetch; such as, for example, a wet etch selective for material 23relative to materials 22 and 62.

An advantage of utilizing metal-containing material 22 can be that themetal-containing material is able to provide higher etch selectivityrelative to the etching conditions utilized for punching through theetchstop material than would be provided by non-metal-containingmaterials. Thus, exposure of a region of the upper surface ofmetal-containing material 22 adjacent opening 50 is not problematic, andinstead enables material 22 to be utilized as a hardmask during thepunch-through of the etchstop material. The metal-containing hardmask ofmaterial 22 may enable a high aspect ratio of opening 50 to bemaintained during the punch-through etch.

Referring to FIG. 9, the protective capping material 23 (FIG. 8) andprotective liner material 62 (FIG. 8) are removed.

Referring to FIG. 10, channel material 70 is deposited within opening50. The channel material may comprise any suitable composition orcombination of compositions; and in some embodiments may compriseappropriately-doped silicon.

Referring to FIG. 11, construction 10 is subjected to planarization (forexample, chemical-mechanical polishing) to form a planarized uppersurface 69 extending across materials 22, 60 and 70.

The construction of FIG. 11 comprises vertically-stacked memory cells 72containing the charge-storage structures 46 and the charge-blockingdielectric 42. In some embodiments, such memory cells may beincorporated into a NAND memory array, and may be considered to be avertical string of memory cells. The material 16 may form a source-sideselect gate 74 beneath the vertical string of memory cells, and themetal-containing material 22 may form a drain-side select gate 76 abovethe vertical string of memory cells.

Utilization of metal-containing material 22 in a drain-side select gatemay be advantageous in some embodiments. In other embodiments,metal-containing material 22 may be sacrificial, and may be removed at aprocessing stage prior to that of FIG. 11. For instance, the material 22may be removed after the punch-through etch of FIG. 8.

The memory cells 72 are examples of vertically-stacked electricalcomponents that may be formed. In other embodiments, othervertically-stacked electrical components may be formed with processinganalogous to that of FIGS. 1-11.

The embodiment of FIG. 11 shows channel material 70 patterned into asolid monolithic plug (or pillar) 80 extending along memory cells 72 andalong drain-side select gate 76. In other embodiments, the channelmaterial may be formed to be in other configurations. For instance, FIG.12 shows a construction 10 a analogous to that of FIG. 11, butcomprising the channel material 70 configured as a hollow monolithicplug (or pillar) 82 extending along memory cells 72 and along drain-sideselect gate 76. In some embodiments, it may be advantageous to configurethe channel material 70 as a hollow plug in that the channel material 70will then be a liner of constant thickness along sidewalls of opening50. Such can enable a uniform thickness of channel material 70 to bemaintained along all of the memory cells 72 even if there is variationof the width dimension of opening 50 along the depth of the opening. Insome embodiments, opening 50 will have a substantially uniform widthalong an entirety of the depth (e.g., will have substantially verticalsidewalls instead of problematic tapered sidewalls of prior artconstructions).

In some embodiments, utilization of metal-containing material 22 as ahardmask along a drain side of a NAND stack may be advantageouslyutilized to maintain the critical dimension of high-aspect-ratiostructures (for instance, structures having aspect ratios approaching40:1 or greater), because of the etch selectivity of metal compared tosilicon oxide, polysilicon and silicon nitride.

There may be numerous advantages to integrating a drain-side select-gatechannel material with memory cell channel material in monolithic channelmaterial pillars (i.e., to forming monolithic pillars (or channels) 80and 82 of FIGS. 11 and 12). A monolithic channel may provide a stringcurrent advantage; and if the monolithic channel is hollow, there may bean additional boost voltage reduction and/or further drain-sideselect-gate leakage advantage. In some embodiments, the monolithicpillars may be formed utilizing one-step etching throughmetal-containing drain-side select-gate material and alternating levelsunder the drain-side select-gate material.

The constructions discussed above may be utilized for fabrication ofintegrated structures which are incorporated into electronic systems.Such electronic systems may be used in, for example, memory modules,device drivers, power modules, communication modems, processor modules,and application-specific modules, and may include multilayer, multichipmodules. The electronic systems may be any of a broad range of systems,such as, for example, clocks, televisions, cell phones, personalcomputers, automobiles, industrial control systems, aircraft, etc.

The term “integrated structure” means any structure utilized inintegrated circuitry; such as structures supported by silicon chips, andincluding structures utilized in integrated memory, integrated logic,etc.

The terms “dielectric” and “electrically insulative” are both utilizedto describe materials having insulative electrical properties. Bothterms are considered synonymous in this disclosure. The utilization ofthe term “dielectric” in some instances, and the term “electricallyinsulative” in other instances, is to provide language variation withinthis disclosure to simplify antecedent basis within the claims thatfollow, and is not utilized to indicate any significant chemical orelectrical differences.

The particular orientation of the various embodiments in the drawings isfor illustrative purposes only, and the embodiments may be rotatedrelative to the shown orientations in some applications. The descriptionprovided herein, and the claims that follow, pertain to any structuresthat have the described relationships between various features,regardless of whether the structures are in the particular orientationof the drawings, or are rotated relative to such orientation.

The cross-sectional views of the accompanying illustrations only showfeatures within the planes of the cross-sections, and do not showmaterials behind the planes of the cross-sections in order to simplifythe drawings.

When a structure is referred to above as being “on” or “against” anotherstructure, it can be directly on the other structure or interveningstructures may also be present. In contrast, when a structure isreferred to as being “directly on” or “directly against” anotherstructure, there are no intervening structures present. When a structureis referred to as being “connected” or “coupled” to another structure,it can be directly connected or coupled to the other structure, orintervening structures may be present. In contrast, when a structure isreferred to as being “directly connected” or “directly coupled” toanother structure, there are no intervening structures present.

Some embodiments include a method of fabricating integrated structures.A metal-containing drain-side select-gate material is formed over astack of alternating first and second levels. An opening is formed whichextends through the metal-containing drain-side select-gate material andthrough the stack of alternating first and second levels. Repeatingvertically-stacked electrical components are formed along the stack ofalternating first and second levels at sidewalls of the opening. Amonolithic channel material pillar is formed which fills the opening andextends along the electrical components and along the metal-containingdrain-side select-gate material.

Some embodiments include a method of fabricating integrated structures.A metal-containing material is formed over a stack of alternating firstand second levels. An opening is formed which extends through themetal-containing material and through the stack of alternating first andsecond levels. Repeating vertically-stacked electrical components areformed along the stack of alternating first and second levels atsidewalls of the opening.

Some embodiments include a method of forming vertically-stacked memorycells. A metal-containing material is formed over a stack of alternatingsilicon dioxide levels and conductively-doped silicon levels. A firstopening is formed to extend through the metal-containing material andthe stack. Cavities are formed to extend into the conductively-dopedsilicon levels along sidewalls of the first opening. Charge-blockingdielectric and charge-storage structures are formed within the cavities.A second opening remains after forming the charge-blocking dielectricand the charge-storage structures. The second opening has sidewallsextending along the metal-containing material and the charge-storagestructures. The sidewalls of the second opening are lined with gatedielectric. Channel material is formed within the lined second opening.

Some embodiments include a method of forming vertically-stacked memorycells. A source-side select-gate material is formed over a sourcematerial. A stack of alternating silicon dioxide levels andconductively-doped silicon levels is formed over the source-sideselect-gate material. A metal-containing drain-side select-gate materialis formed over the stack. A first opening is formed to extend throughthe drain-side select-gate material, the stack and the source-sideselect-gate material. Cavities are formed to extend into theconductively-doped silicon levels along sidewalls of the first opening.Charge-blocking dielectric and charge-storage structures are formedwithin the cavities. A second opening remains after forming thecharge-blocking dielectric and the charge-storage structures. The secondopening has sidewalls extending along the source-side select-gatematerial, the drain-side select-gate material, and the charge-storagestructures. The sidewalls of the second opening are lined with gatedielectric. A bottom of the lined second opening is punched through toextend the second opening to the source material. Channel material isformed within the extended second opening.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

I/we claim:
 1. A method of fabricating integrated structures,comprising: forming metal-containing drain-side select-gate materialover a stack of alternating first and second levels; forming an openingwhich extends through the metal-containing drain-side select-gatematerial and through the stack of alternating first and second levels;forming repeating vertically-stacked electrical components along thestack of alternating first and second levels at sidewalls of theopening; and forming a monolithic channel material pillar which fillsthe opening and extends along the electrical components and along themetal-containing drain-side select-gate material.
 2. The method of claim1 wherein the monolithic channel material pillar is a solid pillar. 3.The method of claim 1 wherein the monolithic channel material pillar isa hollow pillar.
 4. A method of fabricating integrated structures,comprising: forming a metal-containing material over a stack ofalternating first and second levels; forming an opening which extendsthrough the metal-containing material and through the stack ofalternating first and second levels; and forming repeatingvertically-stacked electrical components along the stack of alternatingfirst and second levels at sidewalls of the opening.
 5. The method ofclaim 4 wherein the first and second levels comprise silicon dioxide andconductively-doped silicon, respectively.
 6. The method of claim 4further comprising removing the metal-containing material from over thestack after forming the opening.
 7. The method of claim 4 wherein theopening has an aspect ratio of at least about 40:1.
 8. The method ofclaim 4 wherein: the repeating vertically-stacked electrical componentscomprise a string of memory cells; the metal-containing materialcomprises one or both of tungsten nitride and titanium nitride; and themetal-containing material is incorporated into a drain-side select gateover the string of memory cells.
 9. The method of claim 8 wherein: anelectrically conductive material is under the stack of alternating firstand second levels; the opening is extended through the electricallyconductive material; and the electrically conductive material isincorporated into a source-side select gate under the string of memorycells.
 10. A method of forming vertically-stacked memory cells,comprising: forming a metal-containing material over a stack ofalternating silicon dioxide levels and conductively-doped siliconlevels; forming a first opening to extend through the metal-containingmaterial and the stack; forming cavities extending into theconductively-doped silicon levels along sidewalls of the first opening;forming charge-blocking dielectric and charge-storage structures withinthe cavities; a second opening remaining after forming thecharge-blocking dielectric and the charge-storage structures, the secondopening having sidewalls extending along the metal-containing materialand the charge-storage structures; lining the sidewalls of the secondopening with gate dielectric; and forming channel material within thelined second opening.
 11. The method of claim 10 wherein themetal-containing material comprises one or more metal nitrides.
 12. Themethod of claim 10 wherein the lining of the sidewalls of the secondopening comprises depositing the gate-dielectric material along thesidewalls, or converting polysilicon liner material to gate dielectricthrough oxidation with steam.
 13. The method of claim 10 wherein: thecharge-blocking dielectric and the charge-storage structures aretogether incorporated into a vertically-extending string of memorycells; the metal-containing material comprises one or both of tungstenand titanium nitride; and the metal-containing material is incorporatedinto a drain-side select gate over the vertically-extending string ofmemory cells.
 14. The method of claim 13 wherein: an electricallyconductive material is under the stack of alternating silicon dioxidelevels and conductively-doped silicon levels; the first opening isextended through the electrically conductive material; and theelectrically conductive material is incorporated into a source-sideselect gate under the vertically-extending string of memory cells.
 15. Amethod of forming vertically-stacked memory cells, comprising: forming asource-side select-gate material over a source material; forming a stackof alternating silicon dioxide levels and conductively-doped siliconlevels over the source-side select-gate material; forming ametal-containing drain-side select-gate material over the stack; forminga first opening to extend through the drain-side select-gate material,the stack and the source-side select-gate material; the first openingnot extending into the source material; forming cavities extending intothe conductively-doped silicon levels along sidewalls of the firstopening; forming charge-blocking dielectric and charge-storagestructures within the cavities; a second opening remaining after formingthe charge-blocking dielectric and the charge-storage structures; thesecond opening having sidewalls extending along the source-sideselect-gate material, the drain-side select-gate material, and thecharge-storage structures; lining the sidewalls of the second openingwith gate dielectric; punching through a bottom of the lined secondopening to extend the second opening into the source material; andforming channel material within the extended second opening.
 16. Themethod of claim 15 wherein the channel material forms a solid plugwithin the extended second opening.
 17. The method of claim 15 whereinthe channel material forms a hollow plug within the extended secondopening.
 18. The method of claim 15 wherein the source-side select-gatematerial comprises conductively-doped semiconductor material.
 19. Themethod of claim 15 wherein the source-side select-gate materialcomprises p-type doped silicon.
 20. The method of claim 15 wherein thedrain-side select-gate material comprises metal nitride.
 21. The methodof claim 15 wherein the drain-side select-gate material comprisestitanium nitride.
 22. The method of claim 15 wherein the drain-sideselect-gate material comprises tungsten nitride.
 23. The method of claim15 wherein a protective capping material is over the drain-sideselect-gate material during formation of the first opening, and isremoved prior to forming the channel material.
 24. The method of claim23 wherein a protective capping material comprises one or both ofsilicon dioxide and silicon nitride.
 25. The method of claim 15 whereinthe etch stop material comprises an oxide.